NVMFS4841NT1G【PDF 1/6 页】MOSFET N-CH 30V 89A SO-8FL

收藏本站

您好，
买卖IC网欢迎您。
请登录
免费注册

买卖IC网

Sheet目录494

[1页]2页 3页 4页 5页

NVMFS4841N

Power MOSFET

30V, 7 m W , 89A, Single N ? Channel SO8FL

Features

? Small Footprint (5x6 mm) for Compact Design

? Low R DS(on) to Minimize Conduction Losses

? Low Q G and Capacitance to Minimize Driver Losses

? NVMFS4841NWF ? Wettable Flanks Product

? AEC ? Q101 Qualified and PPAP Capable

? These Devices are Pb ? Free and are RoHS Compliant

MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)

V (BR)DSS

30 V

http://onsemi.com

R DS(ON) MAX

7.0 m W @ 10 V

11.4 m W @ 4.5 V

I D MAX

89 A

Parameter

Symbol

Value

Unit

Drain ? to ? Source Voltage

Gate ? to ? Source Voltage

V DSS

V GS

" 20

D (5,6)

Continuous Drain Cur-

rent R Y J ? mb (Notes 1,

2, 3, 4)

Power Dissipation

R Y J ? mb (Notes 1, 2, 3)

Steady

State

T mb = 25 ° C

T mb = 100 ° C

T mb = 25 ° C

T mb = 100 ° C

I D

P D

112

G (4)

S (1,2,3)

Power Dissipation

T A = 25 ° C

R q JA (Notes 1, 3)

Continuous Drain Cur- T A = 25 ° C

rent R q JA (Notes 1 &

3, 4) Steady T A = 100 ° C

State

T A = 100 ° C

Pulsed Drain Current T A = 25 ° C, t p = 10 m s

Current limited by package T A = 25 ° C

(Note 4)

Operating Junction and Storage Temperature

I D

P D

I DM

I DmaxPkg

T J , T stg

3.7

1.8

336

? 55 to

175

° C

N ? CHANNEL MOSFET

MARKING

DIAGRAM

DFN5 S XXXXXX

(SO ? 8FL) S AYWZZ

CASE 488AA G

STYLE 1 D

Source Current (Body Diode)

Single Pulse Drain ? to ? Source Avalanche

Energy (T J = 25 ° C, V DD = 24 V, V GS = 10 V,

I L(pk) = 19 A, L = 1.0 mH, R G = 25 W )

Lead Temperature for Soldering Purposes

(1/8 ″ from case for 10 s)

I S

E AS

T L

180

260

° C

= Assembly Location

= Year

= Work Week

= Lot Traceability

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Parameter

Junction ? to ? Mounting Board (top) ? Steady

State (Note 2, 3)

Junction ? to ? Ambient ? Steady State (Note 3)

Symbol

R Y J ? mb

R q JA

Value

1.3

Unit

° C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi ( Y ) is used as required per JESD51 ? 12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface ? mounted on FR4 board using a 650 mm 2 , 2 oz. Cu pad.

4. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

? Semiconductor Components Industries, LLC, 2013

May, 2013 ? Rev. 3

Publication Order Number:

NVMFS4841N/D

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

采购需求

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

我的联系方式